Author's Corner > Scope of Papers

Papers are solicited on the following topics:

A: Quality and Reliability Assessment – Techniques and Methods for Devices and Systems

The main topics focus on methodologies, which have been developed to improve the quality and reliability during development, manufacturing and implementation processes of components, devices, boards and even systems. All methods and tools developed to improve quality or assess reliability at components, devices, boards level are relevant to this topic, as well as systems. Of course, studies dedicated to topics, which improve the pure knowledge of quality evaluation and reliability assessment, even without direct application are also relevant.

B1: Si Technologies & Nanoelectronics: Hot carriers, high K, gate materials

Papers describing new insights into behavior of transistor degradation mechanisms such as hot carrier interactions, dielectric breakdown, and bias-temperature instabilities, including SiON and high-k based devices. Your abstract should advance the state of the art in understanding and modeling the dependence on materials, device design, or use conditions.

B2: Si Technologies & Nanoelectronics: Low K, Cu Interconnects

The session covers all topics on silicon technologies and nanoelectronics with respect to Cu-interconnects and low-k material. It ranges from reliability, robustness, stress testing like electromigration, failure mechanisms and methods to reveal root causes. It covers also Modeling and simulation research activity in the field. Contributions from industry and academics are welcome.

B3: Si Technologies & Nanoelectronics: ESD, Latch-up, Radiation Effects

With the steady increase of the technology scale down, reliability of electronics embedded application is becoming a challenge. Thus, this session is devoted on harsh environment, typically on Electro Static Discharge (ESD), Latch- Up and Radiation events and impacts. Proposals will be on new results and advanced studies with a highlight on major achievements. Focus could be on simulation, devices, measurements and demonstrators in mature and advanced technologies.

C: Failure Analysis

The main topics focus on advanced new techniques, challenging applications, innovative case studies on reliability and on failure physics with respect to analysis of materials, devices, and circuits for micro, nano, and optoelectronics.

D1: Microwave and Power Wide Bandgap Devices

The main topics are dealing with the specific mechanisms being relevant for wide band gap material and devices. Of interest are reports and analysis of dedicated processes arising from the special nature of the today’s main subjects like GaN and SiC as well as new candidates in this material area. It should be directed, but not limited to special high switching speed mechanisms, aspects arising from the hetero epitaxial structure of GaN, dedicated high temperature effects but also the extension resp. adaption of failure models from the established materials like silicon towards the new materials. Finally, dedicated studies about the behavior of wide band gap materials under harsh environments and related degradation phenomena are highly welcome.

D2: Photonic Devices

The main topics focuses on reliability, characterization and failure physics of both active and passive optoelectronic devices: emitters (Laser and LEDs), detectors and receivers, and optoelectronic systems. The reliability issues for extending photonics to harsh environment, such as aerospace, will complement the challenges that high speed communication and domestic, industrial and urban lighting continuously propose.

D3: Photovoltaic & Organic Devices

Papers are expected in the field of reliability, stability, analysis and modeling of failure mechanisms of: Organic electronic devices (Organic-Thin-Film-Transistors, Organic Emitting Diodes, Organic Light Emitting Transistors, Organic sensors and Bio-Sensors, Organic Memories, etc.) - Organic dielectrics (analysis of charge trapping, stress induced leakage currents and breakdown of organic dielectrics, etc.) - Organic-based or flexible displays and/or pixel drivers - Solar cells (conventional, thin-film silicon, organic, dye-sensitized and perovskite solar cells, etc.).

E1: Packages & Assembly

The main topics address reliability and failure analysis of all sort of packages and assemblies: wires, solder/adhesive joints, interposers, TSV, materials etc.

E2: MEMS, MOEMS, NEMS & Nano-objects.

The aim of the session is to provide new information on the failure mechanisms of MEMS, MOEMS and NEMS. The modeling of the degradation mechanisms is essential to be addressed for the lifetime prediction of these devices. The induced dielectric charging as well as the one due to charge injection during actuation and the field emission are key issue parameters that directly affect the failure of MEMS capacitive switches and MOEMS. The contact degradation mechanisms due to high electric field or current, the impact of ambient contamination and the mechanical wear out during actuation are important failure mechanisms for ohmic switches. Experimental results or modeling on the reliability of NEMS constitute a key issue parameter for the lifetime prediction of these devices. Finally process induced failure mechanisms can be also addressed.

F: Power Devices Smart-power devices, IGBT, thyristors, High voltage devices, Thermal management

The main topics focus on the various techniques for improving the robustness and reliability of silicon power components including passive elements and in particular: components such as IGBTs, MOSFETs, diodes, smart power devices, power modules, drivers, and passive power devices - power device simulation approaches - thermal management of devices and components including modeling, simulation and testing - cooling technologies - packaging technologies for high power, high temperature and high voltage devices and components - power specific joining, like die attach (silver sintering, diffusion soldering,...), bond wires, terminals,... - lifetime modeling, simulation and testing.

G: Space, Aeronautic and Embedded Systems

The technical scope includes papers dealing with reliability at hardware and/or software levels, EMC, immunity to electrical transients and radiation tolerance to single event effects (SEE) and total ionizing dose (TID) seen from a system level perspective. This also includes the associated system level mitigations. Another important part will be related to papers on guidelines, methodologies, standards and safety analysis. Key topics are: Reliability at system level - EMC, immunity to electrical transients and radiation tolerance seen from the system level perspective - Safety analysis - Fault and failure propagation in systems - Fault tolerant and fail safe architectures - Guidelines, methodologies and standards - On-line and off-line testing for Systems-on-Chip (SoC) - Circuits and system counterfeit detection & avoidance.

H: European FIB User Group (EFUG)

Contributions for the EFUG-FIB session that relate to semiconductor applications of Focused Ion Beam and with developments of FIB systems for this application field are welcome. Topics include: circuit edit (application procedures, new gas chemistries), dedicated FIB procedures for nanoprobing and failure analysis, FIB process monitoring for wafer manufacturing, in-line FIB and wafer return, new FIB instrumentation (HIM, Plasma-FIB, Laser preparation tools, …), efficient preparation workflows (automated TEM preparation, atom probe sample preparation).

For further information concerning the Scientific Program, please contact: event@esref2015.org

Call for papers - (PDF)