Invited Talks

ISTFA outstanding paper
Localization of Weak Points in Thin Dielectric Layers By Electron Beam Absorbed Current (EBAC) Imaging
Jörg Jatzkowski, Mr. Michél Simon-Najasek and Mr. Frank Altmann, Center for Applied Microstructure Diagnostics (CAM), Fraunhofer Institute for Mechanics of Materials, Halle, (Germany)

IRPS 2015 Best paper 
Platform Qualification Methodology: Face Recognition
Ghadeer Antanius, Rutvi Trivedi and Robert Kwasnick, Intel Corporation (USA)

IPFA 2015 Best paper 
UTB GeOI 6T SRAM Cell and Sense Amplifier considering BTI Reliability
Vita Pi-Ho Hu, Pin Su, and Ching-Te Chuang, Department of Electronics Engineering & Institute of Electronics, National Chiao Tung University (Taiwan)

Modelling the impact of refinishing processes on COTS components for use in aerospace applications
Christopher Bailey, University of Greenwich

Impacts of plasma process-induced damage on MOSFET parameter variability and reliability 
Koji ERIGUCHI, Univ. of Kyoto (Japan)

Electron   and   Optical   Beam   Testing   of   Electronic Devices (EOBT): from past to future 
Ludwig BALK, University of Wuppertal, Germany 

Vertical Power Devices Based on Bulk GaN Substrates: high field related issues
Isik  KIZILYALLI,  AVOGY – USA

Failure analysis of photonic devices by high resolution cathodoluminescence
David GACHET, Attolight AG – Switzerland

A unified multiple stress reliability model for microelectronic devices – Application to 1.55 µm DFB laser diode module for space validation
Alain BENSOUSSAN et al, IRT Saint-Exupéry - France (permanent address: Thales Alenia Space, Toulouse - France)

Electromigration, still a reality for 3D ICs ?
Stéphane MOREAU, CEA-LETI (F)

Destruction Failure Analysis and International Reliability Test Standard for Power Devices
Takashi SETOYA, Toshiba Corp (Japan)

Plasma FIB development for 3D IC structures investigations and X-ray tomography sample preparation
Guillaume AUDOIT, CEA-LETI (France)

Detailed descriptions (pdf)