Workshops > Student Research Speed dating

Student Research Speed Dating

Tuesday October 6 - 11:00 to 12:20, Argos room

Moderator: Thomas Zirilli, Freescale (France)

Seize that unique opportunity to network !

Professionals will meet with selected PhD and Masters students that will present their advanced work on reliability and failure analysis on electronics. Let us meet the talents of tomorrow.

Anthony BOSCARO, Le2i, University of Burgundy, Dijon, France, CNES, Toulouse, France

Improvement of Failure Analysis equipments by incorporating signal/image processing tools

Chung Tah CHUA, School of Materials Science and Engineering, Nanyang Technological University, Singapore, CNES, Toulouse, France, Reliability Meets Radiation Hardness

Giulia MARCELLO, Department of Electrical and Electronic Engineering, University of Cagliari, Italy, Evidence for proton diffusion in H+ irradiated DFB and VCSEL commercial laser diodes.

He HUANG, LAAS-CNRS, France, EMC (electromagnetic compatibility) reliability

Kokou ADOKANOU, CEMEF MINES ParisTech, UMR CNRS 7635, PSL Research University, Sophia-Antipolis, France, CNES, Toulouse, France, Thales Alenia Space, Toulouse, nvestigation on the effect of external stress on the DC characteristics of GaAs microwave

Maxime PENZES, ST Microelectronics, Crolles, France, Development and optimization of new qualitative optical techniques for fast and sure default localization on FD SOI and Bulk advanced technologies

Norimichi CHINONE, Research Institute of Electrical Communication, Tohoku University, Japan, Development of method for local C-V curve measurement and its applications

Paula DIAZ REIGOSA, Center of Reliable Power Electronics (CORPE), Aalborg University, Danemark, Failure Mechanisms of Semiconductor Power Devices Operated under Short Circuit Conditions

Roberta PILIA, IntraSpec Technologies, France, Pulsed laser stimulation of Si components in order to assess their sensitivity to the impact of heavy ions.

Roberta RUFFILLI, CEMES, Toulouse, France, Freescale, Toulouse, France, In-depth investigation of metallization aging in power MOSFETs

Thomas LOMBARDI, Freescale, Toulouse, France, Advanced Deprocessing technique for Gate oxide investigation